Research for GaN Technologies, devices and applications to address the challenges of the future GaN roadmap

Projektdetails

Beschreibung

The main objective of UltimateGaN is to safeguard Europe’s leading position in terms of power semiconductors and high performance RF applications by driving an innovative breakthrough change with the next generation of GaN-technologies.
Several predecessor projects are the basis for the availability of the first generation of European based GaN-devices, also revealing that the challenges of these technologies have been heavily underestimated. This makes the high potential of GaN clearly evident to overcome the persisting threats of higher electric fields, current densities and power densities related to the necessity of device shrinkage
KurztitelUltimateGaN
AkronymUltimateGaN
StatusAbgeschlossen
Tatsächlicher Beginn/ -es Ende1/05/1931/10/22

Projektbeteiligte

  • Fronius International GmbH (Projektpartner)
  • AT&S Austria Technologie & Systemtechnik Aktiengesellschaft (Projektpartner)
  • Interuniversitair Micro-Elektronica Centrum (Projektpartner)
  • Aixtron SE (Projektpartner)
  • Infineon Technologies AG (Projektpartner)
  • Siltronic AG (Projektpartner)
  • RISE Research Institutes of Sweden (Projektpartner)

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