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Persönliches Profil
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Jérémy Streque received the Ingénieur degree from École Centrale de Lille, France, and the M.S. degree from the Lille University of Science and Technology in 2007. He then received the Ph.D. degree from École Centrale de Lille in 2011, after carrying out his Ph.D. research at the Institute of Electronics, Micro-electronics, and Nanotechnology, on the topic of magnetostatic MEMS micro-actuators for tactile/haptic information display. In 2012, he joined GeorgiaTech-CNRS, Metz, France, a Joint Laboratory focused on III-Nitrides for solar cells and sensors, and then contributed to the launch of Institut Lafayette, Metz, a scientific private platform dedicated to R&D project on optoelectronics, till 2016. From 2017 to 2019, He has been a post-doctoral researcher at Institut Jean Lamour, Nancy, studying emerging piezoelectric materials and developing SAW sensors for high temperature applications. He finally joined Silicon Austria Labs in September 2019, as a Senior Process Engineer. He is currently Senior Scientist in the Piezoelectric Microsystem Technologies (PMT) Research Unit, within the Microsystems Division. His current areas of research are SAW / BAW structures for telecommunications, based on nitride piezoelectric materials.
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Integration of a High Temperature Transition Metal Oxide NTC Thin Film in a Microbolometer for LWIR Detection
Risquez, S., Redolfi, S., Fleury, C., Wulf, M., Roshanghias, A., Piot, A., Streque, J., Schmoltner, K., Dao, T. D., Puff, M. & Moridi, M., 2023, Integration of a High Temperature Transition Metal Oxide NTC Thin Film in a Microbolometer for LWIR Detection.Publikation: Konferenzband/Beitrag in Buch/Bericht › Konferenzartikel › Begutachtung
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Wide-spectral range DUV – MIR spectroscopic ellipsometry study of PECVD-grown silicon oxide and nitride thinfims: Wide-spectral range DUV – MIR spectroscopic ellipsometry study of PECVD-grown silicon oxide and nitride thinfims
Azeem, S. M., Spettel, J., Nikolai, A., Streque, J., Cassese, T., Pilz, J., Solonenko, D., Fleury, C., Dubois, F., Zhai, Y., Cselyuszka, N., Tortschanoff, A., Moridi, M. & Dao, T. D., 2022.Publikation: Konferenzbeitrag › Poster › Begutachtung
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Design and Characterization of High-Q SAW Resonators Based on the AlN/Sapphire Structure Intended for High-Temperature Wireless Sensor Applications
Streque, J., Camus, J., Laroche, T., Hage-Ali, S., M'Jahed, H., Rammal, M., Aubert, T., Djouadi, M. A., Ballandras, S. & Elmazria, O., 1 Juli 2020, in: IEEE Sensors Journal.Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung
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Stoichiometric lithium niobate crystals: towards identifiable wireless surface acoustic wave sensors operable up to 600°C
Streque, J., Aubert, T., Kokanyan, N., Bartoli, F., Taguett, A., Polewczyk, V., Kokanyan, E., Hage-Ali, S., Boulet, P. & Elmazria, O., 2019, in: IEEE Sensors Letters.Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung
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AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices
Bartoli, F., Aubert, T., Moutaouekkil, M., Streque, J., Pigeat, P., Zhgoon, S., Talbi, A., M'Jahed, H. & Elmazria, O., 2018, in: Sensors and Actuators A: Physical.Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung